Chemical Vapour Deposition of Hexagonal Boron Nitride for Two Dimensional Electronics

Main Article Content

Balaji Sompalle
Jérôme Borme
Fátima Cerqueira
Tangyou Sun
Rui Campos
Pedro Alpuim

Abstract

Hexagonal boron nitride (h-BN) has potential applications in protective coatings, single photon emitters and as substrate for graphene electronics. In this paper, we report on the growth of h-BN by chemical vapor deposition (CVD) using ammonia borane as the precursor. Use of CVD allows controlled synthesis over large areas defined by process parameters, e.g. temperature, time, process chamber pressure and gas partial pressures. Furthermore, independently grown graphene and h-BN layers are put together to realize enhancement in electronic properties of graphene.

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Author Biographies

Balaji Sompalle, Universidade do Minho; INL - International Iberian Nanotechnology Laboratory

Centro de Física

Departamento de Física

Universidade do Minho

Campus de Gualtar

4710 - 057 BRAGA

Portugal

2D Materials and Devices Research Group

INL International Iberian Nanotechnology Laboratory

Av. Mestre José Veiga

4715-330 BRAGA

Portugal

Jérôme Borme, INL - International Iberian Nanotechnology Laboratory

2D Materials and Devices Research Group

INL International Iberian Nanotechnology Laboratory

Av. Mestre José Veiga

4715-330 BRAGA

Portugal

Fátima Cerqueira, Universidade do Minho; INL - International Iberian Nanotechnology Laboratory

Centro de Física

Departamento de Física

Universidade do Minho

Campus de Gualtar

4710 - 057 BRAGA

Portugal

2D Materials and Devices Research Group

INL International Iberian Nanotechnology Laboratory

Av. Mestre José Veiga

4715-330 BRAGA

Portugal

Tangyou Sun, Universidade do Minho; INL - International Iberian Nanotechnology Laboratory

Centro de Física

Departamento de Física

Universidade do Minho

Campus de Gualtar

4710 - 057 BRAGA

Portugal

2D Materials and Devices Research Group

INL International Iberian Nanotechnology Laboratory

Av. Mestre José Veiga

4715-330 BRAGA

Portugal

Rui Campos, Universidade do Minho; INL - International Iberian Nanotechnology Laboratory

Centro de Física

Departamento de Física

Universidade do Minho

Campus de Gualtar

4710 - 057 BRAGA

Portugal

2D Materials and Devices Research Group

INL International Iberian Nanotechnology Laboratory

Av. Mestre José Veiga

4715-330 BRAGA

Portugal

Pedro Alpuim, Universidade do Minho; INL - International Iberian Nanotechnology Laboratory

Centro de Física

Departamento de Física

Universidade do Minho

Campus de Gualtar

4710 - 057 BRAGA

Portugal

2D Materials and Devices Research Group

INL International Iberian Nanotechnology Laboratory

Av. Mestre José Veiga

4715-330 BRAGA

Portugal