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In this paper, a modified structure of self-cascode structure is proposed. In the proposed structure, the MOSFET working in saturation mode is replaced by a Quasi-floating gate MOSFET by which the threshold voltage can be scaled, resulting in an increase in the drain-to-source voltage of other MOSFET operating in the linear region. The increased drain-to-source voltage results in a change in the operating region, which here is from linear to saturation regime. To exploit the performance of the proposed structure, the design of the current mirror circuit is shown in this paper. The proposed architecture when compared with its conventional design showed improvement in performance without affecting the other parameters. The complete design is done using MOSFET models of 180nm technology using Spice at supply dual supply of 0.5V.
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